Invention Grant
- Patent Title: Control device and substrate processing method
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Application No.: US17676361Application Date: 2022-02-21
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Publication No.: US11842904B2Publication Date: 2023-12-12
- Inventor: Hiroshi Yoshida , Takahiro Kawazu
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Venjuris, P.C.
- Priority: JP 18233583 2018.12.13
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/306 ; H01L21/66

Abstract:
A control device for a substrate processing apparatus stores a plurality of records each including a recipe for a substrate etching processing and a control value for a control target, the control value being an actual output value for the control target in the substrate etching processing; acquires a recipe at a start of the substrate etching processing when an abnormality occurs in the temperature sensor or in the concentration sensor; reads a record from among the plurality of records having a recipe identical to the recipe acquired at the start of the substrate etching processing; and executes the substrate etching processing based on the control value of the record read by the processor.
Public/Granted literature
- US20220181172A1 CONTROL DEVICE AND SUBSTRATE PROCESSING METHOD Public/Granted day:2022-06-09
Information query
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