公开(公告)号：US11373886B2

公开(公告)日：2022-06-28

申请号：US16830512

申请日：2020-03-26

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/311 ,  B01F31/00

Abstract: A substrate processing apparatus includes: a mixer that mixes a first phosphoric acid and an additive serving as raw materials of a processing liquid with each other at a predetermined mixing ratio, thereby preparing a mixed liquid; a mixing ratio corrector that corrects the mixing ratio of the raw materials of the processing liquid; a processing unit that processes a substrate with the processing liquid. The mixer includes a mixing tank that stores the mixed liquid, a first phosphoric acid supply that supplies the first phosphoric acid to the mixing tank, and an additive supply that supplies the additive to the mixing tank. The mixing ratio corrector includes a liquid line through which the mixed liquid is delivered from the mixer to the processing unit, and a second phosphoric acid supply connected to the liquid line so as to supply second phosphoric acid to the liquid line.

公开(公告)号：US20200006094A1

公开(公告)日：2020-01-02

申请号：US16454236

申请日：2019-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Yoshida ,  Hideaki Sato

IPC: H01L21/67 ,  H01L21/3213

Abstract: A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.

公开(公告)号：US11842904B2

公开(公告)日：2023-12-12

申请号：US17676361

申请日：2022-02-21

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Yoshida ,  Takahiro Kawazu

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/66

CPC classification number: H01L21/67086 ,  H01L21/30604 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/12

Abstract: A control device for a substrate processing apparatus stores a plurality of records each including a recipe for a substrate etching processing and a control value for a control target, the control value being an actual output value for the control target in the substrate etching processing; acquires a recipe at a start of the substrate etching processing when an abnormality occurs in the temperature sensor or in the concentration sensor; reads a record from among the plurality of records having a recipe identical to the recipe acquired at the start of the substrate etching processing; and executes the substrate etching processing based on the control value of the record read by the processor.

公开(公告)号：US20220181172A1

公开(公告)日：2022-06-09

申请号：US17676361

申请日：2022-02-21

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Yoshida ,  Takahiro Kawazu

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/66

Abstract: A control device for a substrate processing apparatus stores a plurality of records each including a recipe for a substrate etching processing and a control value for a control target, the control value being an actual output value for the control target in the substrate etching processing; acquires a recipe at a start of the substrate etching processing when an abnormality occurs in the temperature sensor or in the concentration sensor; reads a record from among the plurality of records having a recipe identical to the recipe acquired at the start of the substrate etching processing; and executes the substrate etching processing based on the control value of the record read by the processor.

公开(公告)号：US11062922B2

公开(公告)日：2021-07-13

申请号：US15905941

申请日：2018-02-27

Applicant: Tokyo Electron Limited

Inventor： Takashi Nagai ,  Hideaki Sato ,  Hiromi Hara ,  Hiroshi Yoshida ,  Tsukasa Hirayama

IPC: H01L21/67 ,  G08B21/18

Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.

公开(公告)号：US12068175B2

公开(公告)日：2024-08-20

申请号：US17577143

申请日：2022-01-17

Applicant: Tokyo Electron Limited

Inventor： Kouji Ogura ,  Jun Nonaka ,  Takao Inada ,  Yoshinori Nishiwaki ,  Hiroshi Yoshida

IPC: H01L21/67

CPC classification number: H01L21/67086 ,  H01L21/67017

Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

公开(公告)号：US11869781B2

公开(公告)日：2024-01-09

申请号：US16454236

申请日：2019-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Yoshida ,  Hideaki Sato

IPC: H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/67086 ,  H01L21/32134

Abstract: A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.

公开(公告)号：US12033872B2

公开(公告)日：2024-07-09

申请号：US17326821

申请日：2021-05-21

Applicant: Tokyo Electron Limited

Inventor： Keita Hirase ,  Koji Ogura ,  Hiroshi Yoshida ,  Takashi Nagai ,  Jun Nonaka ,  Takumi Honda

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67057 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/67086

Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.

公开(公告)号：US11424141B2

公开(公告)日：2022-08-23

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/311

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US11295966B2

公开(公告)日：2022-04-05

申请号：US16704077

申请日：2019-12-05

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Yoshida ,  Takahiro Kawazu

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/66

Abstract: A substrate processing method includes generating a plurality of records each including a piece of recipe information in a substrate processing in association with control value information of a control target in the substrate processing, storing the plurality of records generated in the generating, acquiring recipe information input by an operator when performing the substrate processing, reading a record including recipe information identical to the recipe information acquired in the acquiring, and controlling the control target based on the control value information in the recipe information of the record read in the reading.