Invention Grant
- Patent Title: Crystal manufacturing method, crystal manufacturing apparatus and single crystal
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Application No.: US17702158Application Date: 2022-03-23
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Publication No.: US11846037B2Publication Date: 2023-12-19
- Inventor: Katsumi Kawasaki , Jun Arima , Minoru Fujita , Jun Hirabayashi
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP 21051396 2021.03.25
- Main IPC: C30B13/18
- IPC: C30B13/18 ; C30B15/16 ; C30B15/30 ; C30B15/20 ; C30B29/16

Abstract:
In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.
Public/Granted literature
- US20220307157A1 CRYSTAL MANUFACTURING METHOD, CRYSTAL MANUFACTURING APPARATUS AND SINGLE CRYSTAL Public/Granted day:2022-09-29
Information query
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