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公开(公告)号：US11626522B2
公开(公告)日：2023-04-11
申请号：US16758790
申请日：2018-09-26
Applicant: TDK Corporation , TAMURA CORPORATION , Novel Crystal Technology, Inc.
Inventor： Jun Arima , Jun Hirabayashi , Minoru Fujita , Kohei Sasaki
IPC: H01L29/06 , H01L29/872 , H01L29/24
Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.
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公开(公告)号：US11492724B2
公开(公告)日：2022-11-08
申请号：US16982280
申请日：2019-01-25
Applicant: TDK CORPORATION
Inventor： Katsumi Kawasaki , Jun Hirabayashi , Minoru Fujita , Daisuke Inokuchi , Jun Arima , Makio Kondo
Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.
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公开(公告)号：US11469334B2
公开(公告)日：2022-10-11
申请号：US17041127
申请日：2019-03-11
Applicant: TDK Corporation , TAMURA CORPORATION , Novel Crystal Technology, Inc.
Inventor： Jun Arima , Minoru Fujita , Jun Hirabayashi , Kohei Sasaki
Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.
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公开(公告)号：US11621357B2
公开(公告)日：2023-04-04
申请号：US17282629
申请日：2019-10-09
Applicant: TDK Corporation , TAMURA CORPORATION , Novel Crystal Technology, Inc.
Inventor： Jun Arima , Minoru Fujita , Jun Hirabayashi , Kohei Sasaki
IPC: H01L29/24 , H01L29/872 , H01L29/41 , H01L29/47
Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.
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公开(公告)号：US11699766B2
公开(公告)日：2023-07-11
申请号：US16646074
申请日：2018-08-30
Applicant: TDK Corporation
Inventor： Jun Arima , Jun Hirabayashi , Minoru Fujita , Katsumi Kawasaki , Daisuke Inokuchi
IPC: H01L29/24 , H01L29/872
CPC classification number: H01L29/8725 , H01L29/24
Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.
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Patent Agency Ranking
公开(公告)号：US20250003110A1
公开(公告)日：2025-01-02
申请号：US18886067
申请日：2024-09-16
Applicant: TDK Corporation
Inventor： Katsumi KAWASAKI , Jun Arima , Minoru Fujita , Jun Hirabayashi
Abstract: A crucible for growing an oxide single crystal comprises a body that includes an oxide containing an additive. In the oxide of the body, a plurality of regions arranged along one axis is set and, among the regions, a concentration of the additive in a first region is higher than a concentration of the additive in a second region. A crystal manufacturing method grows an oxide single crystal by moving a position of an exposed surface of a melt in a crucible along a vertical direction while keeping a seed crystal in contact with the exposed surface. In a gallium oxide single crystal, a concentration of an additive along a growth axis may be within the range of ±5% of an average concentration of the additive.
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公开(公告)号：US11846037B2
公开(公告)日：2023-12-19
申请号：US17702158
申请日：2022-03-23
Applicant: TDK CORPORATION
Inventor： Katsumi Kawasaki , Jun Arima , Minoru Fujita , Jun Hirabayashi
Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.
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公开(公告)号：US11164953B2
公开(公告)日：2021-11-02
申请号：US16496715
申请日：2018-01-26
Applicant: TDK Corporation
Inventor： Jun Hirabayashi , Minoru Fujita , Yoshiaki Fukumitsu
IPC: H01L29/47 , H01L21/04 , H01L29/872 , H01L29/06
Abstract: A semiconductor device includes a semiconductor layer including first and second electrode forming surfaces and side surface, an anode electrode formed on the first electrode forming surface, a cathode electrode formed on the second electrode forming surface; an insulating film continuously formed from the first electrode forming surface to the side surface so as to cover the first edge. The side surface of the semiconductor layer is covered with the insulating film, so that a leak current flowing along the side surface is reduced. Further, the side surface is protected by the insulating film, making cracking, chipping, cleavage, and the like less likely to occur.
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公开(公告)号：US09582130B2
公开(公告)日：2017-02-28
申请号：US14600746
申请日：2015-01-20
Applicant: TDK CORPORATION
Inventor： Hiroshi Shingai , Minoru Fujita , Masahiro Oishi
CPC classification number: G06F3/044 , C23C14/08 , C23C14/3414 , G06F1/16
Abstract: The transparent conductor includes a transparent substrate, a first metal oxide layer, a metal layer, and a second metal oxide layer laminated. At least one of the first and the second metal oxide layers contains four components of Al2O3, ZnO, SnO2, and Ga2O3. X, Y, and Z are within a region surrounded by line segments between point a, point b, point c, point d, point e, and point f, in terms of (X, Y, Z) coordinates shown in a ternary diagram in FIG. 2, or on the line segments where X is a total molar ratio of the Al2O3 and the ZnO, Y is a molar ratio of the SnO2, and Z is a molar ratio of the Ga2O3, relative to the total amount of the four components. A molar ratio of the Al2O3 relative to the total amount of the four components is 1.5 to 3.5% by mole.
Abstract translation: 透明导体包括层叠的透明基板，第一金属氧化物层，金属层和第二金属氧化物层。 第一和第二金属氧化物层中的至少一个包含Al 2 O 3，ZnO，SnO 2和Ga 2 O 3的四种成分。 X，Y，Z分别位于由点（a，b，点c，点d，点e，点f）之间的线段包围的区域内， 在图中。 2，或在X是Al 2 O 3和ZnO的总摩尔比的线段上，Y是SnO 2的摩尔比，Z是相对于四种组分的总量的Ga 2 O 3的摩尔比。 Al 2 O 3相对于四种成分的总量的摩尔比为1.5〜3.5摩尔％。
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公开(公告)号：US11946155B2
公开(公告)日：2024-04-02
申请号：US17299695
申请日：2019-12-03
Applicant: TDK CORPORATION
Inventor： Katsumi Kawasaki , Jun Hirabayashi , Minoru Fujita , Daisuke Inokuchi , Jun Arima , Makio Kondo
CPC classification number: C30B11/002 , C30B29/16
Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.
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