Invention Grant
- Patent Title: Extreme ultraviolet mask and method for forming the same
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Application No.: US17744567Application Date: 2022-05-13
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Publication No.: US11846880B2Publication Date: 2023-12-19
- Inventor: Yun-Yue Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: SEED IP LAW GROUP LLP
- Main IPC: G03F1/24
- IPC: G03F1/24
Abstract:
A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.
Public/Granted literature
- US20230314926A9 EXTREME ULTRAVIOLET MASK AND METHOD FOR FORMING THE SAME Public/Granted day:2023-10-05
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