Chain scission photoresists and methods for forming chain scission photoresists

Invention Grant

US11846883B2 Chain scission photoresists and methods for forming chain scission photoresists 有权

Patent Title: Chain scission photoresists and methods for forming chain scission photoresists
Application No.: US16147131

Application Date: 2018-09-28
Publication No.: US11846883B2

Publication Date: 2023-12-19
Inventor: Robert Bristol , Marie Krysak , Lauren Doyle , James Blackwell , Eungnak Han
Applicant: Intel Corporation
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Schwabe, Williamson & Wyatt, P.C.
Main IPC: G03F7/039
IPC: G03F7/039 ; G03F7/004

Abstract:

A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.

Information query

Espacenet

IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）
G03F7/004	.感光材料（G03F7/12，G03F7/14优先）
G03F7/039	..可光降解的高分子化合物，例如，正电子抗蚀剂（G03F7/075优先；高分子苯醌重氮化合物入G03F7/023）