公开(公告)号：US20240360264A1

公开(公告)日：2024-10-31

申请号：US18766426

申请日：2024-07-08

Applicant: Intel Corporation

Inventor： Eungnak Han ,  Gurpreet Singh ,  Tayseer Mahdi ,  Florian Gstrein ,  Lauren Doyle ,  Marie Krysak ,  James Blackwell ,  Robert Bristol

IPC: C08F265/04 ,  C08F265/02 ,  G03F7/11 ,  H01L23/522 ,  H01L23/528

CPC classification number: C08F265/04 ,  C08F265/02 ,  G03F7/11 ,  H01L23/5226 ,  H01L23/528

Abstract: A chemical composition includes a polymer chain having a surface anchoring group at a terminus of the polymer chain. The surface anchoring group is metal or dielectric selective and the polymer chain further includes at least one of a photo-acid generator, quencher, or a catalyst. In some embodiments, the surface anchoring group is metal selective or dielectric selective. In some embodiments, the polymer chain includes side polymer chains where the side polymer chains include polymers of photo-acid generators, quencher, or catalyst.

公开(公告)号：US20210200085A1

公开(公告)日：2021-07-01

申请号：US16728976

申请日：2019-12-27

Applicant: Intel Corporation

Inventor： Lauren Doyle ,  Marie Krysak ,  Patrick Theofanis ,  James Blackwell ,  Eungnak Han

IPC: G03F7/039 ,  C08F30/08 ,  C08F20/24 ,  C08G83/00 ,  G03F7/20

Abstract: Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.

公开(公告)号：US20240201586A1

公开(公告)日：2024-06-20

申请号：US18068732

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： James Blackwell ,  Charles Cameron Mokhtarzadeh ,  Lauren Elizabeth Doyle ,  Eric Mattson ,  Patrick Theofanis ,  John J. Plombon ,  Michael Robinson ,  Marie Krysak ,  Paul Meza-Morales ,  Scott Semproni ,  Scott B. Clendenning

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

CPC classification number: G03F7/0042 ,  G03F7/038 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/38

Abstract: Precursors and methods related to a tin-based photoresist are disclosed herein. In some embodiments, a method for forming a tin-based photoresist may include exposing a tin-containing precursor and a co-reagent to a substrate to form a photoresist having tin clusters; selectively exposing the photoresist to extreme ultraviolet radiation (EUV); and exposing the photoresist to heat to form, in the region, crosslinking between the tin clusters. In some embodiments, the precursor has a formula R1R2Sn(N(CH3)2)2, and R1 and R2 are selected from the group consisting of neo-silyl, neo-pentyl, phenyl, benzyl, methyl-bis(trimethylsilyl), methyl, ethyl, isopropyl, tert-butyl, n-butyl, N,N-dimethylpropylamine, and N, N-dimethlybutylamine. In other embodiments, the precursor includes a chelating alkyl-amine or alkyl-amide ligand featuring a 5 membered or 6 membered tin-based heterocycle bound κ2-C,N with an alkyl group on the ligand backbone, wherein the alkyl group includes methyl, ethyl, vinyl, hydrogen, or tert-butyl.

公开(公告)号：US11262654B2

公开(公告)日：2022-03-01

申请号：US16728976

申请日：2019-12-27

Applicant: Intel Corporation

Inventor： Lauren Doyle ,  Marie Krysak ,  Patrick Theofanis ,  James Blackwell ,  Eungnak Han

IPC: G03F7/039 ,  C08G83/00 ,  C08F20/24 ,  C08F30/08 ,  G03F7/20

Abstract: Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.

公开(公告)号：US20210371566A1

公开(公告)日：2021-12-02

申请号：US17313932

申请日：2021-05-06

Applicant: Intel Corporation

Inventor： Eungnak Han ,  Gurpreet Singh ,  Tayseer Mahdi ,  Florian Gstrein ,  Lauren Doyle ,  Marie Krysak ,  James Blackwell ,  Robert Bristol

IPC: C08F265/04 ,  C08F265/02 ,  G03F7/11

Abstract: A chemical composition includes a polymer chain having a surface anchoring group at a terminus of the polymer chain. The surface anchoring group is metal or dielectric selective and the polymer chain further includes at least one of a photo-acid generator, quencher, or a catalyst. In some embodiments, the surface anchoring group is metal selective or dielectric selective. In some embodiments, the polymer chain includes side polymer chains where the side polymer chains include polymers of photo-acid generators, quencher, or catalyst.

公开(公告)号：US12037434B2

公开(公告)日：2024-07-16

申请号：US17313932

申请日：2021-05-06

Applicant: Intel Corporation

Inventor： Eungnak Han ,  Gurpreet Singh ,  Tayseer Mahdi ,  Florian Gstrein ,  Lauren Doyle ,  Marie Krysak ,  James Blackwell ,  Robert Bristol

IPC: C08F265/04 ,  C08F265/02 ,  G03F7/11 ,  H01L23/522 ,  H01L23/528

CPC classification number: C08F265/04 ,  C08F265/02 ,  G03F7/11 ,  H01L23/5226 ,  H01L23/528

Abstract: A chemical composition includes a polymer chain having a surface anchoring group at a terminus of the polymer chain. The surface anchoring group is metal or dielectric selective and the polymer chain further includes at least one of a photo-acid generator, quencher, or a catalyst. In some embodiments, the surface anchoring group is metal selective or dielectric selective. In some embodiments, the polymer chain includes side polymer chains where the side polymer chains include polymers of photo-acid generators, quencher, or catalyst.

公开(公告)号：US20240210821A1

公开(公告)日：2024-06-27

申请号：US18145038

申请日：2022-12-22

Applicant: Intel Corporation

Inventor： Charles Cameron Mokhtarzadeh ,  James Blackwell ,  Scott Semproni ,  Scott B. Clendenning ,  Lauren Elizabeth Doyle

IPC: G03F7/00 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/0032 ,  G03F7/038 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/40

Abstract: Precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. In some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula BixOyCz on the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula R′Bi(NR2)2 or R′2BiNR2 where R includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or NR2 is piperidine, and R′ includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. In some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.

公开(公告)号：US11984317B2

公开(公告)日：2024-05-14

申请号：US17308813

申请日：2021-05-05

Applicant: Intel Corporation

Inventor： Marie Krysak ,  James Blackwell ,  Lauren Doyle ,  Brian Zaccheo ,  Patrick Theofanis ,  Michael Robinson ,  Florian Gstrein

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/20 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/0274 ,  G03F7/0042 ,  H01L21/76877 ,  H01L23/5226 ,  G03F7/2004

Abstract: Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.

公开(公告)号：US20240222119A1

公开(公告)日：2024-07-04

申请号：US18147107

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Eungnak Han ,  James Blackwell ,  Gurpreet Singh ,  Florian Gstrein

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0274 ,  H01L21/02118 ,  H01L21/02345 ,  C08F293/00

Abstract: In-situ formation of a block copolymer through deprotection can provide patterns with flexible pitches. A layer of a protected polymer including a protecting group is formed. One or more portions of the layer may be exposed to light. The exposed portion(s) may be baked after the light exposure. The protecting group is removed after the light exposure or bake so that the protected polymer becomes a deprotected polymer in the exposure portion(s). The deprotected polymer is bonded with the protected polymer in the unexposed portion(s) of the layer but has a different solubility from the protected polymer so that phases of the block copolymer are separated. The phase separation can provide a periodic pattern with various pitches. The solution and roughness of the pattern can be enhanced by using CARs formed with a protected, cross-linked polymer that includes a protective group and a function group with a ratio of 50:50.

公开(公告)号：US11846883B2

公开(公告)日：2023-12-19

申请号：US16147131

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Robert Bristol ,  Marie Krysak ,  Lauren Doyle ,  James Blackwell ,  Eungnak Han

IPC: G03F7/039 ,  G03F7/004

CPC classification number: G03F7/039 ,  G03F7/0043 ,  G03F7/0045

Abstract: A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.