Invention Grant
- Patent Title: Composite wafer, semiconductor device and electronic component
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Application No.: US17678619Application Date: 2022-02-23
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Publication No.: US11848237B2Publication Date: 2023-12-19
- Inventor: Paul Ganitzer , Carsten von Koblinski , Thomas Feil , Gerald Lackner , Jochen Mueller , Martin Poelzl , Tobias Polster
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2016103683.8 2016.03.01
- The original application number of the division: US16081236
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/8234 ; H01L21/56 ; H01L21/78 ; H01L23/495 ; H01L21/762 ; H01L21/768 ; H01L25/065 ; H01L23/31

Abstract:
An electronic component includes a semiconductor device including a semiconductor die including a first surface, the first surface including a first metallization structure and edge regions surrounding the first metallization structure, a second surface opposing the first surface and including a second metallization structure, and side faces extending between the first surface and the second surface, wherein the edge regions of the first surface and portions of the side faces are covered by a first polymer layer, wherein the electronic component further includes a plurality of leads and a plastic housing composition, wherein the first metallization structure is coupled to a first lead and the second metallization structure is coupled to a second lead of the plurality of leads.
Public/Granted literature
- US20220181211A1 Composite Wafer, Semiconductor Device and Electronic Component Public/Granted day:2022-06-09
Information query
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