A semiconductor structure may include a metal line, a via above and in electrical contact with the metal lines, and a dielectric layer positioned along a top surface of the metal lines. A top surface of the dielectric layer may be below the dome shaped tip of the via. A top portion of the via may include a dome shaped tip. The semiconductor structure may include a liner positioned along the top surface of the dielectric layer and a top surface of the dome shaped tip of the via. The liner may be made of tantalum nitride or titanium nitride. The dielectric layer may be made of a low-k material. The metal line and the via may be made of ruthenium. The metal line may be made of molybdenum.