发明授权
- 专利标题: Integrated circuit
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申请号: US17833688申请日: 2022-06-06
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公开(公告)号: US11849645B2公开(公告)日: 2023-12-19
- 发明人: Wei-Hao Liao , Hsi-Wen Tien , Chih-Wei Lu , Pin-Ren Dai , Chung-Ju Lee
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Maschoff Brennan
- 分案原申请号: US15860566 2018.01.02
- 主分类号: H01L43/10
- IPC分类号: H01L43/10 ; H10N50/01 ; H10B61/00 ; H10N50/10 ; H10N50/85
摘要:
An integrated circuit includes a substrate, a bottom electrode, a dielectric layer, a metal-containing compound layer, a resistance switching element, and a top electrode. The bottom electrode is over the substrate, the bottom electrode having a bottom portion and a top portion over the bottom portion. The bottom portion of the bottom electrode has a sidewall slanted with respect to a sidewall of the top portion of the bottom electrode. The dielectric layer surrounds the bottom portion of the bottom electrode. The metal-containing compound layer surrounds the top portion of the bottom electrode. A top end of the sidewall of the bottom portion of the bottom electrode is higher than a bottom surface of the metal-containing compound layer. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element.
公开/授权文献
- US20220302376A1 INTEGRATED CIRCUIT 公开/授权日:2022-09-22
信息查询
IPC分类: