Invention Grant
- Patent Title: Heterogeneous bonding structure and method forming same
-
Application No.: US17818747Application Date: 2022-08-10
-
Publication No.: US11854835B2Publication Date: 2023-12-26
- Inventor: Mirng-Ji Lii , Chen-Shien Chen , Lung-Kai Mao , Ming-Da Cheng , Wen-Hsiung Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US17220339 2021.04.01
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498 ; H01L23/522 ; H01L23/538 ; H01L23/00

Abstract:
A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
Public/Granted literature
- US20220384210A1 Heterogeneous Bonding Structure and Method Forming Same Public/Granted day:2022-12-01
Information query
IPC分类: