Invention Grant
- Patent Title: Shutter disk
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Application No.: US17498129Application Date: 2021-10-11
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Publication No.: US11862480B2Publication Date: 2024-01-02
- Inventor: Kang Zhang , Junqi Wei , Yueh Sheng Ow , Kelvin Boh , Yuichi Wada , Ananthkrishna Jupudi , Sarath Babu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilia Whitney LLC
- The original application number of the division: US17010961 2020.09.03
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/322 ; H01L21/02 ; H01L23/00 ; H01L21/768 ; H01L21/67 ; H01L21/50 ; H01L21/60
Abstract:
Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
Public/Granted literature
- US20220028702A1 Shutter Disk Public/Granted day:2022-01-27
Information query
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