Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US17963062Application Date: 2022-10-10
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Publication No.: US11862556B2Publication Date: 2024-01-02
- Inventor: Taemok Gwon , Junhyoung Kim , Chadong Yeo , Youngbum Woo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200031455 2020.03.13
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L29/10

Abstract:
A semiconductor device includes a first substrate, circuit devices disposed on the first substrate, a first interconnection structure electrically connected to the circuit devices, a second substrate disposed on an upper portion of the first interconnection structure, gate electrodes spaced apart from each other and stacked on the second substrate in a direction perpendicular to an upper surface of the second substrate, and channel structures penetrating the gate electrodes, extending perpendicularly to the second substrate, and including a channel layer. The semiconductor device also includes a ground interconnection structure connecting the first substrate and the second substrate, and including an upper via integrated with the second substrate and extending from a lower surface of the second substrate towards the first substrate.
Public/Granted literature
- US20230040582A1 SEMICONDUCTOR DEVICES Public/Granted day:2023-02-09
Information query
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