- 专利标题: Thick photo resist layer metrology target
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申请号: US16996699申请日: 2020-08-18
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公开(公告)号: US11874102B2公开(公告)日: 2024-01-16
- 发明人: Lingyi Guo , Jincheng Pei
- 申请人: KLA Corporation
- 专利权人: KLA Corporation
- 当前专利权人: KLA Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Suiter Swantz pc llo
- 主分类号: G01B11/27
- IPC分类号: G01B11/27 ; G03F1/70 ; G03F1/36 ; G03F7/00
摘要:
A metrology target includes a first target structure formed within at least one of a first area and a third area of a first layer of a sample, where the first target structure comprises a plurality of first cells containing one or more first cell pattern elements; and a second target structure formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements.
公开/授权文献
- US20210199427A1 THICK PHOTO RESIST LAYER METROLOGY TARGET 公开/授权日:2021-07-01
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