Invention Grant
- Patent Title: Device layer interconnects
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Application No.: US17843395Application Date: 2022-06-17
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Publication No.: US11881452B2Publication Date: 2024-01-23
- Inventor: Mark Bohr , Mauro J. Kobrinsky , Marni Nabors
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP PC
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L23/528 ; H01L21/768 ; H01L21/8234 ; H01L23/31 ; H01L27/088 ; H01L29/06 ; H01L29/417 ; H01L23/522 ; H01L23/00

Abstract:
Described herein are integrated circuit (IC) structures, devices, and methods associated with device layer interconnects. For example, an IC die may include a device layer including a transistor array along a semiconductor fin, and a device layer interconnect in the transistor array, wherein the device layer interconnect is in electrical contact with multiple different source/drain regions of the transistor array.
Public/Granted literature
- US20220319978A1 DEVICE LAYER INTERCONNECTS Public/Granted day:2022-10-06
Information query
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