Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US18150501Application Date: 2023-01-05
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Publication No.: US11881484B2Publication Date: 2024-01-23
- Inventor: Toshio Hino , Junji Iwahori
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: Rimon P.C.
- Priority: JP 16131372 2016.07.01
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L29/423 ; H01L29/10 ; H01L21/8238 ; H01L29/775 ; H01L29/08 ; B82Y10/00 ; H01L29/06 ; H01L27/092 ; H01L29/786 ; H01L27/02

Abstract:
A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.
Public/Granted literature
- US20230163133A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2023-05-25
Information query
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