Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17935561Application Date: 2022-09-26
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Publication No.: US11881510B2Publication Date: 2024-01-23
- Inventor: Jinbum Kim , Seokhoon Kim , Kwanheum Lee , Choeun Lee , Sujin Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO, LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO, LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. CHAU & ASSOCIATES, LLC
- Priority: KR 20200104157 2020.08.19
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/167 ; H01L29/786 ; H01L29/06 ; H01L29/423

Abstract:
A semiconductor device includes a channel, a first source/drain structure on a first side surface of the channel, a second source/drain structure on a second side surface of the channel, a gate structure surrounding the channel, an inner spacer layer on a side surface of the gate structure, and an outer spacer layer on an outer surface of the inner spacer layer. The first source/drain structure includes a first source/drain layer on the channel and a second source/drain layer on the first source/drain layer, and on a plane of the semiconductor device that passes through the channel, at least one of a first boundary line of the first source/drain layer in contact with the second source/drain layer and a second boundary line of the first source/drain layer in contact with the channel may be convex, extending toward the channel.
Public/Granted literature
- US20230017277A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-01-19
Information query
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