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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11616144B2

    公开(公告)日：2023-03-28

    申请号：US16412796

    申请日：2019-05-15

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Sunguk Jang ,  Sujin Jung ,  Jinyeong Joe ,  Jeongho Yoo ,  Seung Hun Lee ,  Jongryeol Yoo

    IPC分类号： H01L29/786 ,  H01L29/78 ,  H01L29/417 ,  H01L27/088 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

    摘要： A semiconductor device includes a first active fin protruding from a substrate, a first gate pattern covering a side surface and a top surface of the first active fin, and first source/drain patterns at opposite sides of the first gate pattern, each of the first source/drain patterns including a first lower side and a second lower side spaced apart from each other, a first upper side extended from the first lower side, a second upper side extended from the second lower side. The first lower side may be inclined at a first angle relative to a top surface of the substrate, the second upper side may be inclined at a second angle relative to the top surface of the substrate, and the first angle may be greater than the second angle.

    Semiconductor devices and methods of manufacturing the same
    4.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US11195954B2

    公开(公告)日：2021-12-07

    申请号：US16732864

    申请日：2020-01-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Youngdae Cho ,  Sunguk Jang ,  Sujin Jung ,  Jungtaek Kim ,  Sihyung Lee

    IPC分类号： H01L29/78 ,  H01L29/423

    摘要： A semiconductor device may include semiconductor patterns, a gate structure, a first spacer, a first semiconductor layer and a second semiconductor layer. The semiconductor patterns may be formed on a substrate, and may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate and may overlap in the vertical direction. The gate structure may be formed on the substrate and the semiconductor patterns. At least portion of the gate structure may be formed vertically between the semiconductor patterns. The first spacer may cover opposite sidewalls of the gate structure, the sidewalls opposite to each other in a first direction. The first semiconductor layer may cover the sidewalls of the semiconductor patterns in the first direction, and surfaces of the first spacer and the substrate. The first semiconductor layer may have a first concentration of impurities. The second semiconductor layer may be formed on the first semiconductor layer, and may have a second concentration of impurities different from the first concentration of impurities. The semiconductor device may have good characteristics and high reliability.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11177346B2

    公开(公告)日：2021-11-16

    申请号：US16666958

    申请日：2019-10-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ki Hwan Kim ,  Sunguk Jang ,  Pankwi Park ,  Sangmoon Lee ,  Sujin Jung

    IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L29/66

    摘要： A semiconductor device including an active fin that protrudes from a substrate and forms a plurality of recess regions spaced apart from each other, a gate pattern between the plurality of recess regions that covers a lateral surface and a top surface of the active fin, a plurality of source/drain patterns in the plurality of recess regions, and a diffusion reduction region adjacent to each of a plurality of bottoms of the plurality of recess regions and each of a plurality of sidewalls of the plurality of recess regions, the diffusion reduction region including a dopant having a lower diffusion coefficient than phosphorus (P).

    SEMICONDUCTOR DEVICES
    6.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200381563A1

    公开(公告)日：2020-12-03

    申请号：US16734537

    申请日：2020-01-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sunguk Jang ,  Kihwan Kim ,  Sujin Jung ,  Youngdae Cho

    IPC分类号： H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08

    摘要： A semiconductor device includes an active region on a substrate extending in a first direction, the active region having an upper surface and sidewalls, a plurality of channel layers above the active region to be vertically spaced apart from each other, a gate electrode extending in a second direction to intersect the active region and partially surrounding the plurality of channel layers, and a source/drain region on the active region on at least one side of the gate electrode and in contact with the plurality of channel layers, and extending from the sidewalls of the active region having a major width in the second direction in a first region adjacent to a lowermost channel layer adjacent to the active region among the plurality of channel layer.

    SEMICONDUCTOR DEVICES
    7.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200381562A1

    公开(公告)日：2020-12-03

    申请号：US16715431

    申请日：2019-12-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sujin Jung ,  Junbeom Park ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

    IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

    摘要： A semiconductor device, including a silicon on insulator (SOI) substrate is disclosed. The device may include gate structures formed on the SOI substrate and being spaced apart from each other in a horizontal direction, and a plurality of channels spaced apart from each other in a vertical direction. Each of the channels may extend through each of the gate structures in the horizontal direction. The device may include a seed layer and a source/drain region. The source/drain region may be connected to the channels, and each sidewall of the source/drain region in the horizontal direction may have a concave-convex shape. The device may include a protruding portion of the source/drain region formed between the gate structures that protrudes in the horizontal direction compared to a non-protruding portion of the source/drain region formed between the channels.

    INTEGRATED CIRCUIT DEVICE
    10.
    发明公开
    INTEGRATED CIRCUIT DEVICE 审中-公开

    公开(公告)号：US20240321885A1

    公开(公告)日：2024-09-26

    申请号：US18476688

    申请日：2023-09-28

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jinbum Kim ,  Ingyu Jang ,  Sujin Jung ,  Gyeom Kim ,  Hyojin Kim ,  Yongjun Nam ,  Sangmoon Lee

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L27/092 ,  H01L21/823814 ,  H01L21/823871

    摘要： An integrated circuit device includes a first transistor comprising a first conductivity type, which includes a first channel region and a first source/drain region, a second transistor comprising a second conductivity type, which includes a second channel region and a second source/drain region, a first contact structure that contacts the first source/drain region and comprising a first length, and the first contact structure extends from above the first source/drain region and beyond an uppermost surface of the first channel region by a first vertical distance, and a second contact structure that contacts the second source/drain region and having a second length that is greater than the first length, the second contact extends from above the second source/drain region and beyond an uppermost surface of the second channel region by a second vertical distance, which is greater than the first vertical distance.