Invention Grant
- Patent Title: Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
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Application No.: US17377981Application Date: 2021-07-16
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Publication No.: US11884859B2Publication Date: 2024-01-30
- Inventor: Matthias Stender , Agnes Derecskei , Bradley J. Brennan
- Applicant: Versum Materials US, LLC
- Applicant Address: US AZ Tempe
- Assignee: Versum Materials US, LLC
- Current Assignee: Versum Materials US, LLC
- Current Assignee Address: US AZ Tempe
- Agent Lina Yang
- The original application number of the division: US16520671 2019.07.24
- Main IPC: C09K13/06
- IPC: C09K13/06 ; C09G1/02 ; C09K13/00 ; H01L21/321
Abstract:
This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.
Public/Granted literature
- US20210340445A1 Tungsten Chemical Mechanical Planarization (CMP) With Low Dishing And Low Erosion Topography Public/Granted day:2021-11-04
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