- 专利标题: Temperature informed memory refresh
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申请号: US17745262申请日: 2022-05-16
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公开(公告)号: US11887651B2公开(公告)日: 2024-01-30
- 发明人: Gianni Stephen Alsasua , Harish Reddy Singidi , Kishore Kumar Muchherla , Sampath Ratnam , Ashutosh Malshe , Vamsi Pavan Rayaprolu , Renato Padilla, Jr.
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G11C11/406
- IPC分类号: G11C11/406 ; G06F13/16 ; G11C7/04
摘要:
Devices and techniques for temperature informed memory refresh are described herein. A temperature counter can be updated in response to a memory device write performed under an extreme temperature. Here, the write is performed on a memory device element in the memory device. The memory device element can be sorted above other memory device elements in the memory device based on the temperature counter. Once sorted to the top of these memory device elements, a refresh can be performed the memory device element.
公开/授权文献
- US20220277787A1 TEMPERATURE INFORMED MEMORY REFRESH 公开/授权日:2022-09-01
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