Invention Grant
- Patent Title: Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
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Application No.: US16918129Application Date: 2020-07-01
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Publication No.: US11889683B2Publication Date: 2024-01-30
- Inventor: John D. Hopkins , Darwin A. Clampitt , Michael J. Puett , Christopher R. Ritchie
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H10B41/27
- IPC: H10B41/27 ; H01L23/522 ; H10B43/27 ; H10B43/10 ; H10B41/10 ; H10B43/35
Abstract:
A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. A channel-material string is in individual channel openings in the vertically-alternating first tiers and second tiers. A conductor-material contact is in the individual channel openings directly against the channel material of individual of the channel-material strings. The conductor-material contacts are vertically recessed in the individual channel openings. A conductive via is formed in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening. Other aspects, including structure independent of method, are disclosed.
Public/Granted literature
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