A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.