公开(公告)号：USD769201S1

公开(公告)日：2016-10-18

申请号：US29525566

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Designer： Yoshinori Kusakabe ,  Masami Oikawa

公开(公告)号：US11538678B2

公开(公告)日：2022-12-27

申请号：US17118874

申请日：2020-12-11

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa ,  Yuya Takamura

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

公开(公告)号：US10256162B2

公开(公告)日：2019-04-09

申请号：US15904609

申请日：2018-02-26

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/306 ,  H01L21/3065

Abstract: Disclosed is a substrate processing system capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container. The system includes: a first acquisition unit which acquires, as information, an amount of a film forming material formed on one of the substrates; a second acquisition unit which acquires, as information, the number of the substrates; a first calculating unit which calculates a total amount of the film forming material formed on the substrates based on the amount of the film forming material and the number of the substrates; and a second calculating unit which calculates an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials and a relationship between a predetermined amount of the film forming material and an etching condition.

公开(公告)号：US11926891B2

公开(公告)日：2024-03-12

申请号：US17644868

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa

IPC: C23C16/44

CPC classification number: C23C16/4405

Abstract: A cleaning method for removing a silicon-containing film deposited in a temperature-adjustable process container by a heater and a cooler includes: stabilizing a temperature in the process container to a cleaning temperature; and removing the silicon-containing film by supplying a cleaning gas into the process container stabilized at the cleaning temperature; wherein in the removing the silicon-containing film, a heating capability of the heater and a cooling capability of the cooler are controlled based on the temperature in the process container.

公开(公告)号：US11745231B2

公开(公告)日：2023-09-05

申请号：US17973876

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa ,  Tomoya Hasegawa ,  Koji Sasaki

IPC: B08B9/093 ,  B08B13/00

CPC classification number: B08B9/093 ,  B08B13/00 ,  B08B2209/08

Abstract: A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.

公开(公告)号：US20180254222A1

公开(公告)日：2018-09-06

申请号：US15904609

申请日：2018-02-26

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L22/12 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67253

Abstract: Disclosed is a substrate processing system capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container. The system includes: a first acquisition unit which acquires, as information, an amount of a film forming material formed on one of the substrates; a second acquisition unit which acquires, as information, the number of the substrates; a first calculating unit which calculates a total amount of the film forming material formed on the substrates based on the amount of the film forming material and the number of the substrates; and a second calculating unit which calculates an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials and a relationship between a predetermined amount of the film forming material and an etching condition.

公开(公告)号：US12252786B2

公开(公告)日：2025-03-18

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Tatsuya Miyahara ,  Keisuke Fujita ,  Masami Oikawa ,  Sena Fujita

IPC: B08B5/00 ,  B08B9/08 ,  B08B13/00 ,  C23C16/44 ,  H01L21/02

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US12017261B2

公开(公告)日：2024-06-25

申请号：US17964554

申请日：2022-10-12

Applicant: Tokyo Electron Limited

Inventor： Tomoya Hasegawa ,  Masaki Kurokawa ,  Masami Oikawa

IPC: B08B9/08 ,  B08B13/00 ,  C23C16/42 ,  C23C16/44 ,  H01J37/32

CPC classification number: B08B9/08 ,  B08B13/00 ,  C23C16/42 ,  C23C16/4405 ,  B08B2209/08 ,  H01J37/32862

Abstract: A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.

公开(公告)号：US11534805B2

公开(公告)日：2022-12-27

申请号：US17411372

申请日：2021-08-25

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa ,  Tomoya Hasegawa ,  Koji Sasaki

IPC: B08B9/093 ,  B08B13/00

Abstract: A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.

公开(公告)号：USD791721S1

公开(公告)日：2017-07-11

申请号：US29525563

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Designer： Yoshinori Kusakabe ,  Masami Oikawa