Invention Grant
- Patent Title: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods
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Application No.: US17982397Application Date: 2022-11-07
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Publication No.: US11894289B2Publication Date: 2024-02-06
- Inventor: Hong Wan Ng , Chin Hui Chong , Hem P. Takiar , Seng Kim Ye , Kelvin Tan Aik Boo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- The original application number of the division: US17243466 2021.04.28
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/00 ; H01L23/48 ; H01L27/08 ; H01L49/02 ; H01L23/498

Abstract:
Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second pair of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to corresponding to first and second distances between electrical contacts of the first and second surface-mount capacitors.
Public/Granted literature
Information query
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