Invention Grant
- Patent Title: Vertical 1T-1C DRAM array
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Application No.: US17667498Application Date: 2022-02-08
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Publication No.: US11895824B2Publication Date: 2024-02-06
- Inventor: Ravi Pillarisetty , Van H. Le , Gilbert Dewey , Abhishek A Sharma
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- The original application number of the division: US16480627
- Main IPC: H10B12/00
- IPC: H10B12/00

Abstract:
A programmable array including a plurality cells aligned in a row on a substrate, wherein each of the plurality of cells includes a programmable element and a transistor, wherein the transistor includes a body including a first diffusion region and a second diffusion region on the first diffusion region and separated by a channel and the programmable element is disposed on the second diffusion region. A method of forming an integrated circuit including forming transistor bodies in a plurality rows on a substrate; forming a masking material as a plurality of rows across the bodies; etching the bodies through the masking material to define a width dimension of the transistor bodies; after etching the bodies, patterning each of the plurality of rows of the masking material into a plurality of individual masking units; and replacing each of the plurality of individual masking units with a programmable element.
Public/Granted literature
- US20220165737A1 VERTICAL 1T-1C DRAM ARRAY Public/Granted day:2022-05-26
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