- 专利标题: Semiconductor device and method for forming the same
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申请号: US17838023申请日: 2022-06-10
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公开(公告)号: US11897759B2公开(公告)日: 2024-02-13
- 发明人: Po Chen Yeh , Yi-Hsien Chang , Fu-Chun Huang , Ching-Hui Lin , Chiahung Liu , Shih-Fen Huang , Chun-Ren Cheng
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT Law
- 代理商 Anthony King
- 主分类号: B81B7/00
- IPC分类号: B81B7/00 ; B81C1/00
摘要:
The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.
公开/授权文献
- US20230399225A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 公开/授权日:2023-12-14
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