Invention Grant
- Patent Title: Plasma processing method, plasma processing apparatus, and control apparatus
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Application No.: US17241885Application Date: 2021-04-27
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Publication No.: US11901158B2Publication Date: 2024-02-13
- Inventor: Takeshi Kobayashi , Hiroyuki Kikuchi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Venjuris, P.C.
- Priority: JP 20083484 2020.05.11
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/40 ; H01J37/32 ; H01L21/687 ; C23C16/458 ; C23C16/455

Abstract:
A plasma processing method includes providing a plasma processing apparatus including a rotary table that is rotatably provided in a vacuum container and disposes a plurality of substrates on an upper surface along a circumferential direction, a gas supply source that supplies a plasma processing gas to at least one of a plurality of processing areas separated by a separation area in the circumferential direction of the rotary table, and an antenna that is provided to face the upper surface of the rotary table and generates plasma in the at least one processing area. The plasma processing method further includes disposing the plurality of substrates on the rotary table, and supplying the plasma processing gas into the vacuum container and supplying a pulsed wave of RF power to the antenna while rotating the rotary table.
Public/Granted literature
- US20210351010A1 PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, AND CONTROL APPARATUS Public/Granted day:2021-11-11
Information query
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