Invention Grant
- Patent Title: Method for extreme ultraviolet lithography mask treatment
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Application No.: US17350685Application Date: 2021-06-17
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Publication No.: US11906897B2Publication Date: 2024-02-20
- Inventor: Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/26 ; G03F7/00 ; H01L21/263 ; G03F1/80 ; G03F1/84

Abstract:
A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
Public/Granted literature
- US20210311383A1 Method for Extreme Ultraviolet Lithography Mask Treatment Public/Granted day:2021-10-07
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