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公开(公告)号：US11048158B2
公开(公告)日：2021-06-29
申请号：US15956189
申请日：2018-04-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
Abstract: A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.
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公开(公告)号：US20210294203A1
公开(公告)日：2021-09-23
申请号：US17340991
申请日：2021-06-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US11029593B2
公开(公告)日：2021-06-08
申请号：US16660300
申请日：2019-10-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US20200050098A1
公开(公告)日：2020-02-13
申请号：US16660300
申请日：2019-10-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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Patent Agency Ranking
公开(公告)号：US11906897B2
公开(公告)日：2024-02-20
申请号：US17350685
申请日：2021-06-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
CPC classification number: G03F1/24 , G03F1/26 , G03F1/80 , G03F1/84 , G03F7/70433 , G03F7/70466 , H01L21/2633
Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
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公开(公告)号：US11852966B2
公开(公告)日：2023-12-26
申请号：US17340991
申请日：2021-06-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
CPC classification number: G03F1/24 , G03F1/38 , G03F1/54 , G03F7/2004 , G03F1/22
Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US20210311383A1
公开(公告)日：2021-10-07
申请号：US17350685
申请日：2021-06-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
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公开(公告)号：US20190196322A1
公开(公告)日：2019-06-27
申请号：US15851829
申请日：2017-12-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
CPC classification number: G03F1/24 , G03F1/54 , G03F7/2004
Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US20190324364A1
公开(公告)日：2019-10-24
申请号：US15956189
申请日：2018-04-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
Abstract: A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.
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