Invention Grant
- Patent Title: Memory device and program operation thereof
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Application No.: US17488701Application Date: 2021-09-29
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Publication No.: US11908522B2Publication Date: 2024-02-20
- Inventor: Huangpeng Zhang , Zhichao Du , Ke Jiang , Cong Luo , Daesik Song
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G06F3/06 ; G11C16/04 ; G11C16/08 ; H10B43/27 ; G11C11/56

Abstract:
In certain aspects, a memory device includes memory cells, and a peripheral circuit coupled to the memory cells. The peripheral circuit is configured to initiate a program operation on a selected memory cell of the memory cells, obtain a number of occurrences of one or more suspensions during the program operation, and determine a program pulse limit for the program operation based on the number of occurrences of the suspensions.
Public/Granted literature
- US20230069200A1 MEMORY DEVICE AND PROGRAM OPERATION THEREOF Public/Granted day:2023-03-02
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