Invention Grant
- Patent Title: Semiconductor memory device, memory system, and write method
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Application No.: US18112507Application Date: 2023-02-22
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Publication No.: US11915748B2Publication Date: 2024-02-27
- Inventor: Noboru Shibata , Yasuyuki Matsuda
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP 18146833 2018.08.03
- The original application number of the division: US16529644 2019.08.01
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C11/408 ; G11C16/08
Abstract:
According to one embodiment, a memory system includes a semiconductor memory device including a memory cell capable of holding at least 4-bit data and a controller configured to control a first write operation and a second write operation based on the 4-bit data. The controller includes a conversion circuit configured to convert 4-bit data into 2-bit data. The semiconductor memory device includes a recovery controller configured to recover the 4-bit data based on the converted 2-bit data and data written in the memory cell by the first write operation. The first write operation is executed based on the 4-bit data received from the controller, and the second write operation is executed based on the 4-bit data recovered by the recovery controller.
Public/Granted literature
- US20230206998A1 SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND WRITE METHOD Public/Granted day:2023-06-29
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