- 专利标题: Semiconductor devices
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申请号: US17519967申请日: 2021-11-05
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公开(公告)号: US11942551B2公开(公告)日: 2024-03-26
- 发明人: Jung Taek Kim , Seok Hoon Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong , Min-Hee Choi , Ryong Ha
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel, P.A.
- 优先权: KR 20200172433 2020.12.10
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L29/06 ; H01L29/423
摘要:
A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
公开/授权文献
- US20220190168A1 SEMICONDUCTOR DEVICES 公开/授权日:2022-06-16
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