Invention Grant
- Patent Title: Process for thin film capacitor integration
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Application No.: US17325197Application Date: 2021-05-19
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Publication No.: US11948871B2Publication Date: 2024-04-02
- Inventor: Benjamin Stassen Cook , Yogesh Kumar Ramadass , Salvatore Frank Pavone , Mahmud Halim Chowdhury
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Ray A. King; Frank D. Cimino
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
Disclosed embodiments include an integrated circuit (IC) comprising a silicon wafer, first and second conductive lines on the silicon wafer. There are first, second and third insulation blocks with portions on the first and second conductive lines and the silicon wafer, a metal pillar on the surface of the first conductive line opposite the silicon wafer, and a conductive adhesive block on the surface of the second conductive line opposite the silicon wafer. The IC also has a lead frame having first and second leads, and a capacitor having first and second capacitor terminals in which the first capacitor terminal is connected to the second lead using conductive adhesive, the second capacitor terminal is connected to the second conductive line through the conductive adhesive block, and the first lead is coupled to the first conductive line.
Public/Granted literature
- US20220375836A1 PROCESS FOR THIN FILM CAPACITOR INTEGRATION Public/Granted day:2022-11-24
Information query
IPC分类: