发明授权
- 专利标题: Local patterning and metallization of semiconductor structures using a laser beam
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申请号: US17744519申请日: 2022-05-13
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公开(公告)号: US11949037B2公开(公告)日: 2024-04-02
- 发明人: Pei Hsuan Lu , Benjamin I. Hsia , Taeseok Kim
- 申请人: Maxeon Solar Pte. Ltd.
- 申请人地址: SG Singapore
- 专利权人: Maxeon Solar Pte. Ltd.
- 当前专利权人: Maxeon Solar Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; B23K26/382 ; H01L31/0216 ; H01L31/0224 ; H01L31/0236
摘要:
Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.
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