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公开(公告)号：US11967657B2
公开(公告)日：2024-04-23
申请号：US16841541
申请日：2020-04-06
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/068 , H01L31/0745
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/50
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号：US11862745B2
公开(公告)日：2024-01-02
申请号：US16741591
申请日：2020-01-13
发明人： Richard Hamilton Sewell , David Fredric Joel Kavulak , Lewis Abra , Thomas P. Pass , Taeseok Kim , Matthieu Moors , Benjamin Ian Hsia , Gabriel Harley
IPC分类号： H01L31/05 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/0516 , H01L31/022441 , H01L31/022458 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
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公开(公告)号：US11949037B2
公开(公告)日：2024-04-02
申请号：US17744519
申请日：2022-05-13
发明人： Pei Hsuan Lu , Benjamin I. Hsia , Taeseok Kim
IPC分类号： H01L31/18 , B23K26/382 , H01L31/0216 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/18 , B23K26/382 , H01L31/022441 , H01L31/02168 , H01L31/02363 , H01L31/1804
摘要： Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.
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公开(公告)号：US11817512B2
公开(公告)日：2023-11-14
申请号：US17751446
申请日：2022-05-23
IPC分类号： H01L31/0224 , H01L31/18 , B23K26/364 , B23K26/354 , H01L31/05 , H01L31/0745 , H01L21/60
CPC分类号： H01L31/022441 , B23K26/354 , B23K26/364 , H01L31/0516 , H01L31/0745 , H01L31/182 , H01L2021/60292 , Y02E10/50
摘要： Approaches for foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves locating a metal foil above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate. The method also involves laser welding the metal foil to the alternating N-type and P-type semiconductor regions. The method also involves patterning the metal foil by laser ablating through at least a portion of the metal foil at regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The laser welding and the patterning are performed at the same time.
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公开(公告)号：US20230411538A1
公开(公告)日：2023-12-21
申请号：US18239636
申请日：2023-08-29
发明人： Taeseok Kim , David Smith
IPC分类号： H01L31/02 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/02008 , H01L31/02168 , H01L31/186
摘要： Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.
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公开(公告)号：US11784264B2
公开(公告)日：2023-10-10
申请号：US17389149
申请日：2021-07-29
发明人： Matthieu Moors , Taeseok Kim
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/068
CPC分类号： H01L31/022433 , H01L31/022441 , H01L31/0682 , H01L31/18 , H01L31/186 , H01L31/1864 , Y02E10/547 , Y02P70/50
摘要： A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.
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公开(公告)号：US11894472B2
公开(公告)日：2024-02-06
申请号：US17082995
申请日：2020-10-28
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/50
摘要： Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.
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公开(公告)号：US11824126B2
公开(公告)日：2023-11-21
申请号：US17116472
申请日：2020-12-09
发明人： Taeseok Kim , David Smith
IPC分类号： H01L31/02 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/02008 , H01L31/02168 , H01L31/186
摘要： Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.
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