Invention Grant
- Patent Title: Test device and test method thereof
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Application No.: US17900876Application Date: 2022-09-01
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Publication No.: US11961578B2Publication Date: 2024-04-16
- Inventor: Jyun-Da Chen
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: JCIPRNET
- Main IPC: G11C29/56
- IPC: G11C29/56 ; G06F11/10

Abstract:
A memory device includes a data array, a parity array and an ECC circuit. The ECC circuit is coupled to the data array and the parity array. In a first test mode, the ECC function of the ECC circuit is disabled, and in a second test mode, the ECC circuit directly accesses the parity array to read or write parity information through the parity array.
Public/Granted literature
- US20240079082A1 TEST DEVICE AND TEST METHOD THEREOF Public/Granted day:2024-03-07
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