Invention Grant
- Patent Title: Semiconductor device having via protective layer
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Application No.: US17966864Application Date: 2022-10-16
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Publication No.: US11978688B2Publication Date: 2024-05-07
- Inventor: Jumyong Park , Solji Song , Jinho An , Jeonggi Jin , Jinho Chun , Juil Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200048644 2020.04.22
- The original application number of the division: US17035145 2020.09.28
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/768 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L21/3105 ; H01L21/321 ; H01L23/29
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.
Public/Granted literature
- US20230111136A1 SEMICONDUCTOR DEVICE HAVING VIA PROTECTIVE LAYER Public/Granted day:2023-04-13
Information query
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