Invention Grant
- Patent Title: High-density neuromorphic computing element
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Application No.: US18111471Application Date: 2023-02-17
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Publication No.: US11983622B2Publication Date: 2024-05-14
- Inventor: Borna J. Obradovic , Titash Rakshit , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- The original application number of the division: US15488419 2017.04.14
- Main IPC: G06N3/065
- IPC: G06N3/065 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L29/808 ; H10B41/30

Abstract:
A neuromorphic device for the analog computation of a linear combination of input signals, for use, for example, in an artificial neuron. The neuromorphic device provides non-volatile programming of the weights, and fast evaluation and programming, and is suitable for fabrication at high density as part of a plurality of neuromorphic devices. The neuromorphic device is implemented as a vertical stack of flash-like cells with a common control gate contact and individually contacted source-drain (SD) regions. The vertical stacking of the cells enables efficient use of layout resources.
Public/Granted literature
- US20230206053A1 HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT Public/Granted day:2023-06-29
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