- 专利标题: Localized high density substrate routing
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申请号: US18089213申请日: 2022-12-27
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公开(公告)号: US11984396B2公开(公告)日: 2024-05-14
- 发明人: Robert Starkston , Debendra Mallik , John S. Guzek , Chia-Pin Chiu , Deepak Kulkarni , Ravi V. Mahajan
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 分案原申请号: US13630297 2012.09.28
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/56 ; H01L23/00 ; H01L23/522 ; H01L23/538 ; H01L25/00 ; H01L25/065 ; H01L25/18
摘要:
Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.
公开/授权文献
- US20230130944A1 LOCALIZED HIGH DENSITY SUBSTRATE ROUTING 公开/授权日:2023-04-27
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