公开(公告)号：US12205915B2

公开(公告)日：2025-01-21

申请号：US18346321

申请日：2023-07-03

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Sergio Antonio Chan Arguedas ,  Jimin Yao ,  Chandra Mohan Jha

IPC: H01L23/00 ,  H01L23/16 ,  H01L23/367

Abstract: Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

公开(公告)号：US11978727B2

公开(公告)日：2024-05-07

申请号：US16641922

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Sanka Ganesan ,  Doug Ingerly ,  Robert Sankman ,  Mark Bohr ,  Debendra Mallik

IPC: H01L25/10 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L25/105 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058

Abstract: Systems and methods for providing a low profile stacked die semiconductor package in which a first semiconductor package is stacked with a second semiconductor package and both semiconductor packages are conductively coupled to an active silicon substrate that communicably couples the first semiconductor package to the second semiconductor package. The first semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a first interconnect pattern having a first interconnect pitch. The second semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a second interconnect pattern having a second pitch that is greater than the first pitch. The second semiconductor package may be stacked on the first semiconductor package and conductively coupled to the active silicon substrate using a plurality of conductive members or a plurality of wirebonds.

公开(公告)号：US20240136244A1

公开(公告)日：2024-04-25

申请号：US18395351

申请日：2023-12-22

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Je-Young Chang ,  Ram Viswanath ,  Elah Bozorg-Grayeli ,  Ahmad Al Mohammad

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/495

CPC classification number: H01L23/3672 ,  H01L23/373 ,  H01L23/49568

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

公开(公告)号：US20240006395A1

公开(公告)日：2024-01-04

申请号：US17853778

申请日：2022-06-29

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Debendra Mallik ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Nitin A. Deshpande ,  Omkar G. Karhade ,  Ravindranath Vithal Mahajan ,  Abhishek A. Sharma

IPC: H01L25/16 ,  H01L23/492 ,  H01L23/522 ,  H01L23/528 ,  H01L23/04 ,  H01L23/46 ,  H01L23/48 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L23/492 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/04 ,  H01L2224/80895 ,  H01L23/481 ,  H01L24/08 ,  H01L24/80 ,  H01L24/96 ,  H01L2224/08146 ,  H01L23/46

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of microelectronic sub-assemblies arranged in a coplanar array, each microelectronic sub-assembly having a first side and an opposing second side; a first conductive plate coupled to the first sides of the microelectronic sub-assemblies; and a second conductive plate coupled to the second sides of the microelectronic sub-assemblies. The first conductive plate and the second conductive plate comprise sockets corresponding to each of the microelectronic sub-assemblies, and each microelectronic sub-assembly comprises a first plurality of integrated circuit (IC) dies coupled on one end to a first IC die and on an opposing end to a second IC die; and a second plurality of IC dies coupled to the first IC die and to the second IC die.

公开(公告)号：US20230420410A1

公开(公告)日：2023-12-28

申请号：US17846129

申请日：2022-06-22

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Omkar G. Karhade ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma ,  Tahir Ghani ,  Anand S. Murthy ,  Nitin A. Deshpande

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/522 ,  H01L23/46 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L24/08 ,  H01L23/5226 ,  H01L23/46 ,  H01L24/94 ,  H01L24/96 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08137 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of an integrated circuit (IC) die comprise: a first IC die coupled to at least two second IC dies by interconnects on a first surface of the first IC die and second surfaces of the second IC dies such that the first surface is in contact with the second surfaces. The second surfaces are coplanar, the interconnects comprise dielectric-dielectric bonds and metal-metal bonds, the metal-metal bonds include first bond-pads in the first IC die and second bond-pads in the second IC dies, the first IC die comprises a substrate attached to a metallization stack along a planar interface that is orthogonal to the first surface, the metallization stack comprises a plurality of layers of conductive traces in a dielectric material, and the first bond-pads comprise portions of the conductive traces exposed on the first surface.

公开(公告)号：US20230420376A1

公开(公告)日：2023-12-28

申请号：US18462600

申请日：2023-09-07

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Debendra Mallik

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L25/18

CPC classification number: H01L23/5385 ,  H01L2224/17181 ,  H01L25/0652 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L21/4857 ,  H01L21/4853 ,  H01L21/481 ,  H01L25/18 ,  H01L2224/1703 ,  H01L2224/73253 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L25/0655

Abstract: Disclosed herein are microelectronic structures including bridges, and related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate with first and second metal layers; a cavity in the substrate, where a portion of the first and second metal layers, are exposed with the portion of the first metal layer partially overlapping the portion of the second metal layer; and a bridge component in the cavity, having a first conductive contact at a first face and a second conductive contact at a second face opposing the first face, the second face towards a bottom surface of the cavity, the portion of the first metal layer is between the second face of the bridge component and the portion of the second metal layer, and the second conductive contact is electrically coupled to the portion of the second metal layer in the cavity.

公开(公告)号：US20230343738A1

公开(公告)日：2023-10-26

申请号：US18346321

申请日：2023-07-03

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Sergio Antonio Chan Arguedas ,  Jimin Yao ,  Chandra Mohan Jha

IPC: H01L23/00 ,  H01L23/16 ,  H01L23/367

CPC classification number: H01L24/17 ,  H01L23/16 ,  H01L23/3675 ,  H01L23/562 ,  H01L2224/17051 ,  H01L2224/1713 ,  H01L2224/17163 ,  H01L2224/17181 ,  H01L2224/17519

Abstract: Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

公开(公告)号：US11705377B2

公开(公告)日：2023-07-18

申请号：US17720202

申请日：2022-04-13

Applicant: Intel Corporation

Inventor： Mitul Modi ,  Robert L. Sankman ,  Debendra Mallik ,  Ravindranath V. Mahajan ,  Amruthavalli P. Alur ,  Yikang Deng ,  Eric J. Li

IPC: H01L23/13 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L23/13 ,  H01L21/4857 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L21/4853 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06586 ,  H01L2924/1432 ,  H01L2924/1434

Abstract: An apparatus is provided which comprises: a plurality of dielectric layers forming a substrate, a plurality of first conductive contacts on a first surface of the substrate, a cavity in the first surface of the substrate defining a second surface parallel to the first surface, a plurality of second conductive contacts on the second surface of the substrate, one or more integrated circuit die(s) coupled with the second conductive contacts, and mold material at least partially covering the one or more integrated circuit die(s) and the first conductive contacts. Other embodiments are also disclosed and claimed.

公开(公告)号：US20230207525A1

公开(公告)日：2023-06-29

申请号：US17561845

申请日：2021-12-24

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Sriram Srinivasan ,  Christopher Pelto ,  Gwang-Soo Kim ,  Nitin Deshpande ,  Omkar Karhade

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L23/3185 ,  H01L24/08 ,  H01L24/16 ,  H01L24/73 ,  H01L2224/08145 ,  H01L2224/16145 ,  H01L2224/73253 ,  H01L2225/06568

Abstract: A packaged device comprises first die stack and a third die. The first die stack includes a first die comprising first conductive contacts each at a first side of the first die, and a second die comprising second conductive contacts each at a second side of the second die. First solder bonds which each extend to a respective one of the first conductive contacts. The third die comprises third conductive contacts each at a third side of the third die. The third die is coupled to the first die stack via second solder bonds which each extend to a respective one of the second conductive contacts, and to a respective one of the third conductive contacts. Each die of the first die stack is coupled to each of a respective one or more other dies of the first die stack via respective hybrid bonds.

公开(公告)号：US20230197678A1

公开(公告)日：2023-06-22

申请号：US17558265

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Mohammad Enamul Kabir ,  Debendra Mallik

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0657 ,  H01L2924/15311

Abstract: A microelectronic package structure with inorganic fill material having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die between the second and third dies. A second layer is over the first layer, the second layer comprising an inorganic dielectric material, wherein a top surface of the second layer is substantially coplanar with top surfaces of the second and third dies.