公开(公告)号：US09269701B2

公开(公告)日：2016-02-23

申请号：US14818902

申请日：2015-08-05

申请人： Intel Corporation

发明人： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC分类号： H01L21/44 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US11515248B2

公开(公告)日：2022-11-29

申请号：US17009308

申请日：2020-09-01

申请人： Intel Corporation

发明人： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC分类号： H01L25/18 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56

摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US11984396B2

公开(公告)日：2024-05-14

申请号：US18089213

申请日：2022-12-27

申请人： Intel Corporation

发明人： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC分类号： H01L23/5226 ,  H01L23/5385 ,  H01L24/06 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/563 ,  H01L24/05 ,  H01L24/13 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/05541 ,  H01L2924/206 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US09820384B2

公开(公告)日：2017-11-14

申请号：US14102676

申请日：2013-12-11

申请人： Intel Corporation

发明人： Sasha Oster ,  Robert L. Sankman ,  Charles Gealer ,  Omkar Karhade ,  John S. Guzek ,  Ravi V. Mahajan ,  James C. Matayabas, Jr. ,  Johanna Swan ,  Feras Eid ,  Shawna Liff ,  Timothy McIntosh ,  Telesphor Kamgaing ,  Adel Elsherbini ,  Kemal Aygun

IPC分类号： H05K1/18 ,  H05K13/04 ,  H01L23/00 ,  H05K1/03 ,  G06F1/16 ,  H01L21/56

CPC分类号： H05K1/189 ,  G06F1/163 ,  H01L21/568 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H05K1/0393 ,  H05K1/181 ,  H05K1/185 ,  H05K13/0469 ,  H05K2201/0137 ,  H05K2203/1469 ,  Y10T29/49146 ,  H01L2924/00

摘要： This disclosure relates generally to devices, systems, and methods for making a flexible microelectronic assembly. In an example, a polymer is molded over a microelectronic component, the polymer mold assuming a substantially rigid state following the molding. A routing layer is formed with respect to the microelectronic component and the polymer mold, the routing layer including traces electrically coupled to the microelectronic component. An input is applied to the polymer mold, the polymer mold transitioning from the substantially rigid state to a substantially flexible state upon application of the input.

公开(公告)号：US20150340353A1

公开(公告)日：2015-11-26

申请号：US14818902

申请日：2015-08-05

申请人： Intel Corporation

发明人： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC分类号： H01L25/00 ,  H01L25/065

CPC分类号： H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

摘要翻译： 本文通常描述用于局部高密度衬底布线的系统和方法的实施例。 在一个或多个实施例中，一种装置包括介质，第一和第二电路元件，互连元件和电介质层。 该介质可以包括其中的低密度路由。 互连元件可以嵌入在介质中，并且可以在其中包括多个导电构件，导电构件可以电耦合到第一电路元件和第二电路元件。 互连元件可以包括其中的高密度路由。 电介质层可以在互连裸片上方，电介质层包括通过其中的第一和第二电路元件。

公开(公告)号：US12107042B2

公开(公告)日：2024-10-01

申请号：US17972340

申请日：2022-10-24

申请人： Intel Corporation

发明人： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L25/18

CPC分类号： H01L23/5226 ,  H01L23/5385 ,  H01L24/06 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/563 ,  H01L24/05 ,  H01L24/13 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/05541 ,  H01L2924/206 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US10796988B2

公开(公告)日：2020-10-06

申请号：US16002740

申请日：2018-06-07

申请人： Intel Corporation

发明人： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC分类号： H01L23/52 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56 ,  H01L25/18

摘要： Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US09941246B2

公开(公告)日：2018-04-10

申请号：US14648998

申请日：2014-07-02

申请人： Intel Corporation

发明人： Nitin Deshpande ,  Ravi V. Mahajan

IPC分类号： H01L25/00 ,  H01L25/065 ,  H01L21/52 ,  H01L21/768 ,  H01L23/04 ,  H01L49/02

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/76898 ,  H01L23/04 ,  H01L23/13 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L28/00 ,  H01L29/0657 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/15153 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83

摘要： An electronic assembly that includes a first electronic device. The first electronic device includes a cavity that extends into a back side of the first electronic device. The electronic assembly further includes a second electronic device. The second electronic device is mounted to the first electronic device within the cavity in the first electronic device. In some example forms of the electronic assembly, the first electronic device and the second electronic device are each a die. It should be noted that other forms of the electronic assembly are contemplated where only one of the first electronic device and the second electronic device is a die. In some forms of the electronic assembly, the second electronic device is soldered to the first electronic device.

公开(公告)号：US20160260688A1

公开(公告)日：2016-09-08

申请号：US14648998

申请日：2014-07-02

申请人： INTEL CORPORATION

发明人： Nitin Deshpande ,  Ravi V. Mahajan

IPC分类号： H01L25/065 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/76898 ,  H01L23/04 ,  H01L23/13 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L28/00 ,  H01L29/0657 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/15153 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83

摘要： An electronic assembly that includes a first electronic device. The first electronic device includes a cavity that extends into a back side of the first electronic device. The electronic assembly further includes a second electronic device. The second electronic device is mounted to the first electronic device within the cavity in the first electronic device. In some example forms of the electronic assembly, the first electronic device and the second electronic device are each a die. It should be noted that other forms of the electronic assembly are contemplated where only one of the first electronic device and the second electronic device is a die. In some forms of the electronic assembly, the second electronic device is soldered to the first electronic device.

摘要翻译： 一种包括第一电子装置的电子组件。 第一电子设备包括延伸到第一电子设备的后侧的空腔。 电子组件还包括第二电子设备。 第二电子设备被安装到第一电子设备内的空腔内的第一电子设备。 在电子组件的一些示例形式中，第一电子设备和第二电子设备各自是模具。 应当注意，考虑到第一电子设备和第二电子设备中的仅一个是管芯的其他形式的电子组件。 在电子组件的某些形式中，第二电子设备被焊接到第一电子设备。