- 专利标题： Method of embedding low-k materials in antennas
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申请号： US17360242申请日： 2021-06-28
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公开(公告)号： US11984668B2公开(公告)日： 2024-05-14
- 发明人: Monsen Liu , Lai Wei Chih , Chung-Hao Tsai , Jeng-Shien Hsieh , En-Hsiang Yeh , Chuei-Tang Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US16390427 2019.04.22
- 主分类号： H01Q9/04
- IPC分类号： H01Q9/04 ; H01L21/56 ; H01L23/00 ; H01Q1/38
摘要：
A device includes a patch antenna, which includes a feeding line, and a ground panel over the feeding line. The ground panel has an aperture therein. A low-k dielectric module is over and aligned to the aperture. A patch is over the low-k dielectric module.
公开/授权文献
- US20210328347A1 Embedding Low-K Materials in Antennas 公开/授权日：2021-10-21
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