- 专利标题： CMOS cap for MEMS devices
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申请号： US17156639申请日： 2021-01-25
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公开(公告)号： US11990498B2公开(公告)日： 2024-05-21
- 发明人: Wan Chia Ang , Piotr Kropelnicki , Ilker Ender Ocak , Paul Simon Pontin
- 申请人： Meridian Innovation Pte Ltd
- 申请人地址： SG Singapore
- 专利权人： Meridian Innovation Pte Ltd
- 当前专利权人： Meridian Innovation Pte Ltd
- 当前专利权人地址： SG Singapore
- 代理机构： HORIZON IP PTE LTD
- 分案原申请号： US15653558 2017.07.19
- 主分类号： G01J5/12
- IPC分类号： G01J5/12 ; B81C1/00 ; G01J5/02 ; G01J5/04 ; G01J5/08 ; G01J5/16 ; H01L27/146 ; H01L31/0224 ; H01L31/09
摘要：
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.
公开/授权文献
- US20210159263A1 CMOS CAP FOR MEMS DEVICES 公开/授权日：2021-05-27
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