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    Scalable thermoelectric-based infrared detector
    1.
    发明授权
    Scalable thermoelectric-based infrared detector 有权

    公开(公告)号：US10903262B2

    公开(公告)日：2021-01-26

    申请号：US16517653

    申请日：2019-07-21

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L27/146 ,  G01J5/04 ,  G01J5/12 ,  G01J5/02 ,  B81C1/00 ,  G01J5/08 ,  G01J5/16 ,  H01L31/0224 ,  H01L31/09

    Abstract: Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.

    Scalable thermoelectric-based infrared detector
    4.
    发明授权
    Scalable thermoelectric-based infrared detector 有权

    公开(公告)号：US10403674B2

    公开(公告)日：2019-09-03

    申请号：US15647284

    申请日：2017-07-12

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L23/62 ,  H01L27/146 ,  G01J5/04 ,  B81C1/00 ,  G01J5/02 ,  G01J5/12 ,  G01J5/08 ,  G01J5/16 ,  H01L31/0224 ,  H01L31/09

    Abstract: Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

    Method for manufacturing a thermoelectric-based infrared detector having a MEMS structure above a hybrid component
    6.
    发明授权
    Method for manufacturing a thermoelectric-based infrared detector having a MEMS structure above a hybrid component 有权

    公开(公告)号：US10937824B2

    公开(公告)日：2021-03-02

    申请号：US16224782

    申请日：2018-12-18

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L27/146 ,  G01J5/12 ,  G01J5/04 ,  B81C1/00 ,  G01J5/02 ,  B81B7/02 ,  G01J5/20

    Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

    Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
    7.
    发明授权
    Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines 有权

    公开(公告)号：US10199424B1

    公开(公告)日：2019-02-05

    申请号：US15653558

    申请日：2017-07-19

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L27/146 ,  G01J5/02 ,  G01J5/12 ,  G01J5/20

    Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

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