- 专利标题： Stacked forksheet transistors
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申请号： US16913796申请日： 2020-06-26
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公开(公告)号： US11996411B2公开(公告)日： 2024-05-28
- 发明人: Cheng-Ying Huang , Gilbert Dewey , Anh Phan , Nicole K. Thomas , Urusa Alaan , Seung Hoon Sung , Christopher M. Neumann , Willy Rachmady , Patrick Morrow , Hui Jae Yoo , Richard E. Schenker , Marko Radosavljevic , Jack T. Kavalieros , Ehren Mannebach
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/775 ; H10B12/00
摘要：
Embodiments disclosed herein include stacked forksheet transistor devices, and methods of fabricating stacked forksheet transistor devices. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to an edge of the backbone. A second transistor device includes a second vertical stack of semiconductor channels adjacent to the edge of the backbone. The second transistor device is stacked on the first transistor device.
公开/授权文献
- US20210407999A1 STACKED FORKSHEET TRANSISTORS 公开/授权日：2021-12-30
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