Invention Grant
- Patent Title: Semiconductor processing apparatus having improved temperature control
-
Application No.: US16269376Application Date: 2019-02-06
-
Publication No.: US12009185B2Publication Date: 2024-06-11
- Inventor: Jun Ma , Chen-An Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/458 ; H01J37/32 ; H01L21/687
Abstract:
A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.
Public/Granted literature
- US20190252162A1 SEMICONDUCTOR PROCESSING APPARATUS HAVING IMPROVED TEMPERATURE CONTROL Public/Granted day:2019-08-15
Information query
IPC分类:
