A method includes applying a first voltage pulse across a memory cell, wherein the memory cell includes a selector, wherein the first voltage pulse switches the selector into an on-state; after applying the first voltage pulse, applying a second voltage pulse across the memory cell, wherein before applying the second voltage pulse the selector has a first voltage threshold, wherein after applying the second voltage pulse the selector has a second voltage threshold that is less than the first voltage threshold; and after applying the second voltage pulse, applying a third voltage pulse across the memory cell, wherein the third voltage pulse switches the selector into an on-state; wherein the selector remains continuously in an off-state between the first voltage pulse and the third voltage pulse.