公开(公告)号：US12014774B2

公开(公告)日：2024-06-18

申请号：US17658701

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Elia Ambrosi ,  Cheng-Hsien Wu ,  Hengyuan Lee ,  Xinyu Bao

IPC: G11C13/00 ,  H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: G11C13/003 ,  G11C13/0004 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0069 ,  H10N70/231 ,  G11C2013/0092 ,  G11C2213/15 ,  H10B63/84 ,  H10N70/826

Abstract: A method includes applying a first voltage pulse across a memory cell, wherein the memory cell includes a selector, wherein the first voltage pulse switches the selector into an on-state; after applying the first voltage pulse, applying a second voltage pulse across the memory cell, wherein before applying the second voltage pulse the selector has a first voltage threshold, wherein after applying the second voltage pulse the selector has a second voltage threshold that is less than the first voltage threshold; and after applying the second voltage pulse, applying a third voltage pulse across the memory cell, wherein the third voltage pulse switches the selector into an on-state; wherein the selector remains continuously in an off-state between the first voltage pulse and the third voltage pulse.

公开(公告)号：US20240296885A1

公开(公告)日：2024-09-05

申请号：US18661902

申请日：2024-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Elia Ambrosi ,  Cheng-Hsien Wu ,  Hengyuan Lee ,  Xinyu Bao

IPC: G11C13/00 ,  H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: G11C13/003 ,  G11C13/0004 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0069 ,  H10N70/231 ,  G11C2013/0092 ,  G11C2213/15 ,  H10B63/84 ,  H10N70/826

Abstract: A method includes applying a first voltage pulse across a memory cell, wherein the memory cell includes a selector, wherein the first voltage pulse switches the selector into an on-state; after applying the first voltage pulse, applying a second voltage pulse across the memory cell, wherein before applying the second voltage pulse the selector has a first voltage threshold, wherein after applying the second voltage pulse the selector has a second voltage threshold that is less than the first voltage threshold; and after applying the second voltage pulse, applying a third voltage pulse across the memory cell, wherein the third voltage pulse switches the selector into an on-state; wherein the selector remains continuously in an off-state between the first voltage pulse and the third voltage pulse.

公开(公告)号：US20230253038A1

公开(公告)日：2023-08-10

申请号：US17658701

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Elia Ambrosi ,  Cheng-Hsien Wu ,  Hengyuan Lee ,  Xinyu Bao

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/003 ,  G11C13/0004 ,  H01L45/06 ,  G11C2213/15 ,  H01L27/2481

Abstract: A method includes applying a first voltage pulse across a memory cell, wherein the memory cell includes a selector, wherein the first voltage pulse switches the selector into an on-state; after applying the first voltage pulse, applying a second voltage pulse across the memory cell, wherein before applying the second voltage pulse the selector has a first voltage threshold, wherein after applying the second voltage pulse the selector has a second voltage threshold that is less than the first voltage threshold; and after applying the second voltage pulse, applying a third voltage pulse across the memory cell, wherein the third voltage pulse switches the selector into an on-state; wherein the selector remains continuously in an off-state between the first voltage pulse and the third voltage pulse.