Invention Grant
- Patent Title: Double sense amp and fractional bit assignment in non-volatile memory structures
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Application No.: US17486090Application Date: 2021-09-27
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Publication No.: US12014795B2Publication Date: 2024-06-18
- Inventor: Yuki Fujita , Kei Kitamura , Kyosuke Matsumoto , Masahiro Kano , Minoru Yamashita , Ryuji Yamashita , Shuzo Otsuka
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: Dickinson Wright PLLC
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/10 ; G11C7/12 ; G11C16/10 ; G11C16/26

Abstract:
A method for programming a non-volatile memory structure, wherein the method comprises initiating a two-dimensional fractional number of bits-per-cell programming scheme with respect to at least a first memory cell and a second memory cell of a plurality of memory cells of the memory structure, wherein the memory structure comprises: (1) a first memory array that comprises a first population of the plurality of memory cells and associated peripheral circuitry disposed below the first population of the plurality of memory cells, (2) a second memory array that is positioned above the first memory array and comprises a second population of the plurality of memory cells and the associated peripheral circuitry that is disposed above the second population of the plurality of memory cells, and (3) a data bus tap electrically coupling the first memory array and the second memory array.
Public/Granted literature
- US20230110995A1 DOUBLE SENSE AMP AND FRACTIONAL BIT ASSIGNMENT IN NON-VOLATILE MEMORY STRUCTURES Public/Granted day:2023-04-13
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