Invention Grant
- Patent Title: Mask structure, semiconductor structure and methods for manufacturing same
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Application No.: US17604057Application Date: 2021-07-14
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Publication No.: US12027369B2Publication Date: 2024-07-02
- Inventor: Qiang Wan , Jun Xia , Kangshu Zhan , Sen Li , Penghui Xu , Tao Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2110340669.5 2021.03.30
- International Application: PCT/CN2021/106144 2021.07.14
- International Announcement: WO2022/205673A 2022.10.06
- Date entered country: 2021-10-15
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/033 ; H01L21/311 ; H10B12/00
Abstract:
The present application relates to a mask structure, a semiconductor structure and methods for manufacturing the same. The method for manufacturing a mask structure includes: dividing an overall structure into two regions, and developing the array region and the periphery region with a negative photoresist.
Public/Granted literature
- US20230012863A1 MASK STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING SAME Public/Granted day:2023-01-19
Information query
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